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PD55025-E PD55025S-E
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
General features

Excellent thermal stability Common source configuration POUT = 25W with 14.5dB gain @ 500MHz / 12.5V New RF plastic package
PowerSO-10RF (formed lead)
Description
The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55025 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55025's superior linearity performance makes it an ideal solution for car mobile radio.
PowerSO-10RF (straight lead)
Pin connection
Source
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Gate
Drain
Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)
Order codes
Part number PD55025-E PD55025S-E PD55015TR-E PD55015STR-E Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Packing Tube Tube Tape and reel Tape and reel
May 2006
Rev 1
1/22
www.st.com 22
Contents
PD55025-E, PD55025S-E
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 4 5 6 7
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7.1 7.2 7.3 7.4 PD55025S (VDS = 12.5V ID = 500mA) . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PD55025S (VDS = 12.5V ID = 1.5A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PD55025S (VDS = 12.5V ID = 3A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 PD55025S (VDS = 13.8V IDS = 3A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
PD55025-E, PD55025S-E
Electrical data
1
1.1
Electrical data
Maximum ratings
Table 1.
Symbol V(BR)DSS VGS ID PDISS TJ TSTG
Absolute maximum ratings (TCASE = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70C) Max. operating junction temperature Storage temperature Value 40 20 7 79 165 -65 to +150 Unit V V A W C C
1.2
Thermal data
Table 2.
Symbol RthJC
Thermal data
Parameter Junction - case thermal resistance Value 1.2 Unit C/W
3/22
Electrical Characteristics
PD55025-E, PD55025S-E
2
Electrical Characteristics
TCASE = +25 oC
2.1
Static
Table 3.
Symbol IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0V VGS = 20V VDS = 28V VGS = 10V VDS = 10V VGS = 0V VGS = 0V VGS = 0V
Static
Test conditions VDS = 28V VDS = 0V ID = 100mA ID = 3A ID = 3A VDS = 12.5V VDS = 12.5V VDS = 12.5V f = 1MHz f = 1MHz f = 1MHz 2.5 86 76 5.8 2.0 0.7 Min. Typ. Max. 1 1 5.0 0.8 Unit A A V V mho pF pF pF
2.2
Dynamic
Table 4.
Symbol POUT GP hD
Dynamic
Test conditions VDD = 12.5V, IDQ = 200mA f = 500MHz Min. 25 14.5 50 20:1 Typ. Max. Unit W dB % VSWR
VDD = 12.5V, IDQ = 200mA, POUT = 25W, f = 500MHz VDD = 12.5V, IDQ = 200mA, POUT = 25W, f = 500MHz
Load VDD = 15.5V, IDQ = 200mA, POUT = 25W, f = 500MHz mismatch All phase angles
4/22
PD55025-E, PD55025S-E
Impedance
3
Impedance
Figure 1. Current conventions
Table 5.
Impedance data
Freq. (MHz) 175 480 500 520 ZIN () 3.20 - j 4.41 1.01 - j 1.67 0.93 - j 1.53 0.88 - j 1.98 ZDL() 1.56 + j 2.14 1.06 + j 0.22 1.12 + j 0.20 1.07 + j 0.83
5/22
Typical performance
PD55025-E, PD55025S-E
4
Figure 2.
Typical performance
Capacitance vs supply voltage Figure 3. Drain current vs gate source voltage
1000
6 Vds = 10 V 5
C is s 100 C os s
Id (A) 3 4
C (pF) 10
2
C rs s f = 1 MHz 1 0 4 8 12 16 20 24 28 Vds (V)
1
0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Vgs (V)
Figure 4.
Gate-source voltage vs case temperature
Figure 5.
Output power vs input power
1.04
45 40 480 MHz 500 MHz 520 MHz 35
1.02 Id = 5 A
30
1.00 Id (A)
Id = 3 A 0.98 Id = 2 A Id = 1 A 0.96 Vds = 10 V 0.94 -25 0 25 Vgs (V) 50 75 100
Pout (W)
Id = 4 A
25 20 15 10 5 Vdd = 12.5 V Idq = 200 m A
Id = .5 A
0 0.00 1.00 2.00 3.00 P in (W ) 4.00
5.00
6.00
6/22
PD55025-E, PD55025S-E
Typical performance
Figure 6.
45 40 35 30 Pout (W) 25 20 15 10 5 0 0
Output power vs input power
Figure 7.
18
Power gain vs. output power
Vdd = 13.8 V
16 14
Vdd = 12.5 V
12 Gp (dB) 10 520 MHz 8 6 4 480 MHz 500 MHz
f = 520 MHz Idq = 200 m A
2 0 0 10 20 P out (W ) 30
Vdd = 12.5 V Idq = 200 m A
1
2
3 Pin (W )
4
5
6
40
50
Figure 8.
70
Drain efficiency vs output power
Figure 9.
0 -5
Input return loss vs output power
60 500 MHz 50 480, 520 MHz
RL (dB)
Vdd = 12.5 V Idq = 200 m A
-10 -15 -20 -25 500 MHz 480 MHz
Nd (%)
40
30
20 Vdd = 12.5 V Idq = 200 m A
-30 -35 -40
520 MHz
10
0 0 10 20 P out (W ) 30 40 50
0
10
20 P out (W )
30
40
50
7/22
Typical performance
PD55025-E, PD55025S-E
Figure 10. Output power vs bias current
40 35
Figure 11. Drain efficiency vs bias current
60
50
30 480 MHz 25 Pout (W) 520 MHz 20 15 500 MHz
500 MHz 480 MHz 520 MHz
40
Nd (%)
30
20
10
10
5 0 0 200 400 600 Idq (m A) 800 1000 1200 Vdd = 12.5 V Pin = 0.85 W
Vdd = 12.5 V Pin = 0.85 W 0 0 200 400 600 Idq (m A) 800 1000 1200
Figure 12. Output power vs supply voltage
35 480 MHz 30 500 MHz 25 520 MHz Pout (W)
Figure 13. Drain efficiency vs supply voltage
70
60 500 MHz 50 500 MHz
Nd (%)
20
40 520 MHz 30
15
10 Idq = 200 m A P in = 0.85 W
20
5
10
Idq = 200 m A Pin = 0.85 W 6 8 10 12 Vdd (V) 14 16 18
0 5 7 9 11 13 15 17 19 Vdd (V)
0
8/22
PD55025-E, PD55025S-E
Typical performance
Figure 14. Output power vs gate bias voltage
Figure 15. Output power vs input power (f = 175 MHz)
45 40
30
25
35
20 Pout (W)
480 MHz
Pout (W)
30 25 20 15 10
15
500 MHz 520 MHz
10
5 Vdd = 12.5 V Pin = 0.85 W 0 0 1 2 Vgs (V) 3 4
5 0 0 0.5 1 Pin (W ) 1.5
Vdd = 12.5 V Idq = 200 m A
2
2.5
Figure 16. Power gain vs output power (f = 175 MHz)
30
Figure 17. Drain efficiency vs output power (f = 175 MHz)
80 70
25 60 20 50 Gp (W) 15 Nd (%) Vdd = 12.5 V Idq = 200 m A 40 30 10 20 5 10 0 0 10 20 P out (W ) 30 40 50 0 10 20 P out (W ) 30 40 50 Vdd = 12.5 V Idq = 200 m A
0
9/22
Typical performance Figure 18. Input return loss vs output power (f = 175 MHz)
0
PD55025-E, PD55025S-E
-5
-10 RL (dB)
-15
-20
-25
Vdd = 12.5 V Idq = 200 m A
-30 0 10 20 P out (W ) 30 40 50
10/22
PD55025-E, PD55025S-E
Test circuit
5
Test circuit
Figure 19. 500MHz test circuit schematic (engineering)
VGG +
B1 B2
VDD
+
C10 C9 C8
R3
R2
C19 L1
C18
C17
C16
R1
C7 Z4 DUT Z5 Z6 Z7 Z8 Z9
C15
RF INPUT
Z1 C1 C2
Z2
N2
Z3
RF OUTPUT
C3
C4
C5
C6
C13 C12 C11
C14
Table 6.
Test circuit component part list
Component B1,B2 C1,C13 FERRITE BEAD 300 pF, 100 mil CHIP CAPACITOR 1 to 20 pF TRIMMER CAPACITOR 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 120 pF 100 mil CHIP CAPACITOR 10 F, 50 V ELECTROLYTIC CAPACITOR 0.1 mF, 100 mil CHIP CAP 1.000 pF 100 mil CHIP CAP 33 pF, 100 mil CHIP CAP 56 nH, 7 TURN, COILCRAFT TYPE N FLANGE MOUNT 15 1 W CHIP RESISTOR , 1 K 1 W CHIP RESISTOR , 33 K 1 W CHIP RESISTOR , 0.471" X 0.080" MICROSTRIP 1.082" X 0.080" MICROSTRIP 0.372" X 0.080" MICROSTRIP 0.260" X 0.223" MICROSTRIP 0.050" X 0.080" MICROSTRIP 0.551" X 0.080" MICROSTRIP 0.825" X 0.080" MICROSTRIP 0.489" X 0.080" MICROSTRIP ROGER, ULTRA LAM 2000 THK 0.030", r = 2.55 2oz. ED cu 2 SIDES. Description
C2,C3,C4,C12,C13,C14 C6 C7, C19 C10, C16 C9, C17 C8, C18 C5, C11 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4,Z5 Z6 Z7 Z8 Z9 BOARD
11/22
Circuit layout
PD55025-E, PD55025S-E
6
Circuit layout
Figure 20. 500MHz test circuit
BIAS
VDD
GND
Figure 21. 500MHz test circuit photomaster
12/22
PD55025-E, PD55025S-E Figure 22. 175MHz test circuit schematic (engineering)
+ V G G
Circuit layout
F1 B
F2 B
C 1 1 C 1 2 C 1 3
+ V D D
)
C 8
C 9
C 1 0
R 1 R 2 C 1 4 C 1 6
C 1 5 L 1
R 3 R F I PT N U C 1 R 5 R 4
C 6
C 4
C 5
C 2
C 3
C 7
Table 7.
175MHz test circuit component part list
Description 300 pF CHIP CAPACITOR 91 pF CHIP CAPACITOR 75 pF CHIP CAPACITOR 1-20 pF TRIMMER CAPACITOR .01 F MOLDED CAPACITOR 10 F ELECTROLYTIC CAPACITOR .1 F CHIP CAPACITOR 1000 pF CHIP CAPACITOR 1200 pF CHIP CAPACITOR FERRITE BEAD 33 K CHIP RESISTOR 17 CHIP RESISTOR 15 CHIP RESISTOR 47 CHIP RESISTOR 220 CHIP RESISTOR 5 TURN, 16 AWG MAGNET WIRE, ID = .40" ,INDUCTOR ROGER, ULTRA LAM 2000, THK 0.030", r = 2.55 2oz. ED cu 2 SIDES.
Component C1, C6 C2, C3 C4, C14 C5 C7 C8, C13 C9, C12 C10, C11 C15, C16 FB1, FB2 R1 R2 R3 R4 R5 L1 BOARD
)
R F OTU UPT
13/22
Common source s-parameter
PD55025-E, PD55025S-E
7
7.1
Common source s-parameter
PD55025S (VDS = 12.5V ID = 500mA)
Table 8. S-parameter
IS11I 0.837 0.846 0.862 0.878 0.895 0.910 0.921 0.932 0.941 0.946 0.953 0.957 0.960 0.964 0.966 0.968 0.970 0.971 0.972 0.972 S11 -162 -169 -171 -173 -174 -174 -175 -176 -177 -178 -178 -179 -180 180 179 178 178 177 177 176 IS21I 13.33 6.51 4.15 2.93 2.20 1.71 1.36 1.11 0.92 0.78 0.66 0.57 0.50 0.44 0.39 0.95 0.31 0.28 0.26 0.23 S21 89 76 66 58 51 45 40 35 31 27 24 21 18 16 14 12 10 8 6 5 IS12I 0.018 0.017 0.016 0.015 0.013 0.012 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.004 0.003 0.002 0.002 0.002 0.002 0.003 S12 -1 -12 -19 -26 -31 -36 -40 -42 -43 -44 -43 -42 -39 -34 -29 -15 -2 16 34 45 IS22I 0.780 0.803 0.831 0.859 0.874 0.886 0.892 0.897 0.915 0.932 0.946 0.964 0.975 0.976 0.981 0.979 0.964 0.960 0.953 0.940 S22 -168 -172 -172 -172 -172 -173 -173 -175 -176 -177 -178 -179 -178 -179 -179 -179 -179 180 179 178
FREQ
(MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000
7.2
PD55025S (VDS = 12.5V ID = 1.5A)
Table 9. FREQ
(MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000
S-parameter
IS11I 0.876 0.880 0.887 0.895 0.905 0.915 0.922 0.931 0.938 0.942 0.948 0.952 0.954 0.959 0.961 0.963 0.966 0.967 0.968 0.968 S11 -164 -172 -174 -175 -176 -176 -177 -178 -178 -179 -179 -180 180 179 178 178 177 177 176 176 IS21I 13.87 6.87 4.46 3.22 2.47 1.96 1.60 1.32 1.11 0.95 0.82 0.71 0.63 0.55 0.49 0.45 0.40 0.36 0.33 0.30 S21 90 79 71 64 58 52 47 42 38 34 31 28 25 22 20 17 15 13 11 9 IS12I 0.013 0.012 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 S12 1 -7 -13 -18 -22 -25 -28 -30 -31 -31 -30 -27 -22 -16 -6 3 17 27 38 45 IS22I 0.823 0.838 0.855 0.873 0.879 0.885 0.886 0.889 0.906 0.923 0.937 0.956 0.967 0.969 0.973 0.970 0.956 0.952 0.945 0.933 S22 -172 -175 -176 -175 -175 -175 -175 -177 -178 -179 -179 -179 -179 -179 -179 -179 -180 179 179 177
14/22
PD55025-E, PD55025S-E
Common source s-parameter
7.3
PD55025S (VDS = 12.5V ID = 3A)
Table 10. FREQ
(MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000
S-parameter
IS11I 0.890 0.892 0.898 0.904 0.913 0.921 0.926 0.935 0.941 0.944 0.949 0.953 0.955 0.959 0.961 0.963 0.966 0.967 0.968 0.969 S11 -165 -172 -174 -175 -176 -177 -177 -178 -179 -179 -180 180 179 179 178 177 177 176 176 175 IS21I 13.19 6.55 4.28 3.11 2.39 1.91 1.57 1.31 1.10 0.94 0.82 0.71 0.63 0.56 0.50 0.45 0.41 0.37 0.34 0.31 S21 91 81 73 66 60 54 49 44 40 36 33 29 26 24 21 19 17 15 15 11 IS12I 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.007 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.004 S12 2 -6 -12 -15 -20 -23 -25 -27 -28 -27 -25 -21 -17 -10 -2 10 22 32 41 49 IS22I 0.837 0.846 0.865 0.879 0.883 0.089 0.887 0.889 0.905 0.921 0.936 0.954 0.964 0.965 0.968 0.966 0.952 0.948 0.942 0.930 S22 -174 -176 -176 -176 -176 -176 -176 -177 -179 -179 -180 180 -180 -180 -180 -179 -180 180 179 177
7.4
PD55025S (VDS = 13.8V IDS = 3A)
Table 11. S-parameter
IS11I 0.849 0.881 0.895 0.903 0.912 0.921 0.927 0.936 0.943 0.946 0.952 0.955 0.957 0.961 0.963 0.965 0.968 0.969 0.970 0.971 S11 -164 -171 -173 -175 -176 -176 -177 -178 -178 -179 -180 180 179 179 178 178 177 176 176 175 IS21I 13.99 6.94 4.51 3.27 2.50 1.99 1.62 1.35 1.13 0.97 0.83 0.72 0.64 0.56 0.50 0.45 0.41 0.37 0.34 0.31 S21 91 80 72 65 58 52 47 42 38 34 31 27 24 22 19 17 15 13 11 9 IS12I 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.006 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 S12 2 -6 -12 -16 -21 -24 -27 -29 -29 -29 -26 -23 -17 -8 2 14 27 36 45 54 IS22I 0.833 0.841 0.857 0.871 0.877 0.882 0.883 0.886 0.904 0.920 0.935 0.955 0.965 0.967 0.970 0.968 0.953 0.949 0.943 0.930 S22 -173 -175 -175 -175 -175 -175 -176 -177 -178 -179 -179 -180 -179 -179 -179 -179 -179 180 179 178
FREQ
(MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000
15/22
Package mechanical data
PD55025-E, PD55025S-E
8
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
16/22
PD55025-E, PD55025S-E Table 12.
Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G L R1 R2 T T1 T2 2 deg 0.8 5 deg 6 deg 10 deg 8 deg 2 deg 0.8 5.4 0.23 9.4 7.4 13.85 9.3 7.3 5.9 0 3.4 1.2 0.15
Package mechanical data
PowerSO-10RF Formed lead (Gull Wing) Mechanical data
mm. Typ. 0.05 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 14.1 9.4 7.4 6.1 0.5 1.2 1 1.1 0.25 0.031 5 deg 6 deg 10 deg 8 deg 0.030 5.65 0.32 9.6 7.6 14.35 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.544 0.365 0.286 0.231 Max. 0.1 3.6 1.4 0.25 Min. 0. 0.134 0.046 0.005 Inch Typ. 0.0019 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.555 0.37 0.292 0.24 0.019 0.047 0.039 0.042 0.01 0.221 0.012 0.377 0.298 0.565 0.375 0.294 0.247 Max. 0.0038 0.142 0.054 0.009
Note:
Resin protrusions not included (max value: 0.15 mm per side) Figure 23. Package dimensions
Critical dimensions: - Stand-off (A1) - Overall width (L)
17/22
Package mechanical data Table 13.
Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 0.8 6 deg 10 deg 5.4 0.23 9.4 7.4 15.15 9.3 7.3 5.9 1.62 3.4 1.2 0.15
PD55025-E, PD55025S-E
PowerSO-10RF Straight Lead Mechanical data
mm. Typ. 1.67 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 15.4 9.4 7.4 6.1 0.5 1.2 0.25 0.031 6 deg 10 deg 5.65 0.32 9.6 7.6 15.65 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.595 0.365 0.286 0.231 Max. 1.72 3.6 1.4 0.25 Min. 0.064 0.134 0.046 0.005 Inch Typ. 0.065 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.606 0.37 0.292 0.24 0.019 0.047 0.01 0.221 0.012 0.377 0.298 0.615 0.375 0.294 0.247 Max. 0.068 0.142 0.054 0.009
Note:
Resin protrusions not included (max value: 0.15 mm per side) Figure 24. Package dimensions
CRITICAL DIMENSIONS: - Overall width (L)
18/22
PD55025-E, PD55025S-E Figure 25. Tube information
Package mechanical data
19/22
Package mechanical data Figure 26. Reel information
PD55025-E, PD55025S-E
20/22
PD55025-E, PD55025S-E
Revision history
9
Revision history
Table 14.
Date 29-Apr-2006
Revision history
Revision 1 Initial release. Changes
21/22
PD55025-E, PD55025S-E
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